G11C 2213/82
Array having, for accessing a cell, a word line, a bit line
Official title: Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
G11C2213/82 (Array having, for accessing a cell, a word line, a bit line) appears on 406 US grants and 434 published applications in this corpus.
Search patents in G11C- Granted patents
- 406
- Published applications
- 434
- Assignees
- 93
- Inventors
- 623
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 2 | 1 |
| 2008 | 2 | 3 |
| 2009 | 1 | 1 |
| 2010 | 5 | 10 |
| 2011 | 1 | 6 |
| 2012 | 5 | 6 |
| 2013 | 9 | 4 |
| 2014 | 7 | 11 |
| 2015 | 11 | 30 |
| 2016 | 41 | 43 |
| 2017 | 40 | 33 |
| 2018 | 32 | 29 |
| 2019 | 44 | 47 |
| 2020 | 40 | 36 |
| 2021 | 38 | 41 |
| 2022 | 31 | 40 |
| 2023 | 30 | 37 |
| 2024 | 29 | 18 |
| 2025 | 30 | 19 |
| 2026 | 8 | 17 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Memristor-enabled programmable sensing and switching threshold adjustment11 Aug 2026US 12,706,143 B1Synopsys, Inc.
- Semiconductor memory device with even and odd coplanar wordlines7 Jul 2026US 12,676,195 B2Kioxia Corporation
- Non-volatile memories with mixed OxRAM/FeRAM technologies2 Jun 2026US 12,645,927 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Phase change element configured to increase discrete data states14 Apr 2026US 12,603,127 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory devices with differential threshold voltages7 Apr 2026US 12,597,466 B2Taiwan Semiconductor Manufacturing Company.Ltd
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- RRAM Memory Cell Structure13 Aug 2026US 2026/0239894 A1Silicon Storage Technology, Inc.
- Phase change element configured to increase discrete data states23 Jul 2026US 2026/0212924 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory devices with differential threshold voltages16 Jul 2026US 2026/0204314 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory performing computing operation and operation method of memory system16 Jul 2026US 2026/0204315 A1SK hynix Inc.
Most cited
By later US patents
- Ultra low-cost solid-state memory198US 7,463,502 B2Hitachi Global Storage Technologies Netherlands B. V. · 2008
- Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks121US 7,835,170 B2Nantero, Inc. · 2010
- Ultra low-cost solid-state memory39US 7,291,878 B2Hitachi Global Storage Technologies Netherlands B. V. · 2007
- Electronic device and operating method thereof31US 10,042,588 B2SK hynix Inc. · 2018
- Memory devices formed from correlated electron materials26US 10,002,665 B1Arm Limited · 2018