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US 12,676,195 B2Granted
Semiconductor memory device with even and odd coplanar wordlines
AssigneeKioxia Corporation
InventorsYuki Inuzuka, Akiyuki Murayama
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AssigneeKioxia Corporation
InventorsYuki Inuzuka, Akiyuki Murayama
Estimating the term…
A semiconductor memory device includes a memory pillar; first and second conductive layers on either side of the memory pillar; third and fourth conductive layers and fifth and sixth conductive layer respectively below and above first and second conductive layers; seventh and eighth conductive layers below third and fourth conductive layers; ninth and tenth conductive layers above fifth and sixth conductive layers; memory cells formed between a respective first through tenth conductive layers and the memory pillar; and a control circuit, which applies a read voltage to the first conductive layer, a negative voltage to second, fourth, and sixth conductive layers, and a read pass voltage to other conductive layers, applies the read pass voltage to first, second, fourth, and sixth conductive layers, applies a ground voltage or lower to a first group of conductive layers, and then a ground voltage to a second group of conductive layers.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A method of performing a read operation on a semiconductor memory device comprising:
Dependencies are inferred from the claim text.