Memristor-enabled programmable sensing and switching threshold adjustment

A method comprising:

• coupling a source terminal of a first PMOS transistor to a first node and a drain terminal of the first PMOS transistor to a second node;
• coupling a first terminal of a first programmable memristor to the first node and a second terminal of the first programmable memristor to a first voltage;
• coupling a first source/drain terminal of a first select transistor to the first node, a second drain/source terminal of the first select transistor to a third node adapted to receive a second voltage;
• applying a first select signal to a gate terminal of the select transistor;
• and
• passing a first current through the first programmable memristor via the first select transistor to change a resistance of the first programmable memristor thereby to change a pullup strength of the first PMOS transistor, wherein the resistance of the first programmable memristor increases if the first voltage is greater than the second voltage, and wherein the resistance of the first programmable memristor decreases if the second voltage is greater than the first voltage.

A system comprising:

• a memory storing instructions;
• and
• a processor, coupled with the memory and to execute the instructions, the instructions when executed cause the processor to form a circuit comprising:
• a first PMOS transistor having a source terminal coupled to a first node and a drain terminal coupled to a second node;
• a first programmable memristor having a first terminal coupled to the first node and a second terminal adapted to receive a first voltage;
• and
• a first select transistor having a first source/drain terminal coupled to the first node, a second drain/source terminal coupled to a third node adapted to receive a second voltage, and a gate terminal receiving a first select signal, wherein a resistance of the first programmable memristor is responsive to a difference between the first and second voltages thereby to change a pullup strength of the first PMOS transistor, wherein the resistance of the first programmable memristor increases if the first voltage is greater than the second voltage, and wherein the resistance of the first programmable memristor decreases if the second voltage is greater than the first voltage.