G11C 2213/79
Array wherein the access device being a transistor
G11C2213/79 (Array wherein the access device being a transistor) appears on 2,325 US grants and 2,514 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,325
- Published applications
- 2,514
- Assignees
- 306
- Inventors
- 2,538
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 4 |
| 2003 | 6 | 22 |
| 2004 | 12 | 43 |
| 2005 | 31 | 69 |
| 2006 | 61 | 92 |
| 2007 | 51 | 101 |
| 2008 | 81 | 150 |
| 2009 | 75 | 131 |
| 2010 | 109 | 129 |
| 2011 | 128 | 115 |
| 2012 | 130 | 88 |
| 2013 | 108 | 83 |
| 2014 | 85 | 124 |
| 2015 | 122 | 128 |
| 2016 | 158 | 140 |
| 2017 | 145 | 103 |
| 2018 | 115 | 105 |
| 2019 | 143 | 145 |
| 2020 | 144 | 145 |
| 2021 | 130 | 142 |
| 2022 | 120 | 123 |
| 2023 | 101 | 129 |
| 2024 | 130 | 79 |
| 2025 | 92 | 75 |
| 2026 | 42 | 49 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Structure for multiple sense amplifiers of memory device29 Sep 2026US 12,749,529 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- High signal-to-noise-ratio memory cell programming for in-memory computing3 Sep 2026US 2026/0260689 A1OmniVision Technologies, Inc.
- Programming circuit, integrated circuit, and method27 Aug 2026US 2026/0252869 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- RRAM Memory Cell Structure13 Aug 2026US 2026/0239894 A1Silicon Storage Technology, Inc.
- Crossbar circuits for performing convolution operations30 Jul 2026US 2026/0220224 A1TetraMem Inc.
Most cited
By later US patents
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Programmable resistance memory arrays with reference cells317US 6,314,014 B1Ovonyx, Inc. · 2001
- Phase change memory cell and manufacturing method286US 7,688,619 B2Macronix International Co., Ltd. · 2010
- Phase change memory device and manufacturing method260US 7,786,460 B2Macronix International Co., Ltd. · 2010
- Memory device and method of operating same247US 6,937,507 B2Silicon Storage Technology, Inc. · 2005