G11C 2213/74
Array wherein each memory cell has more than one access device
G11C2213/74 (Array wherein each memory cell has more than one access device) appears on 489 US grants and 495 published applications in this corpus.
Search patents in G11C- Granted patents
- 489
- Published applications
- 495
- Assignees
- 121
- Inventors
- 701
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 2 | 6 |
| 2004 | 6 | 10 |
| 2005 | 4 | 8 |
| 2006 | 8 | 6 |
| 2007 | 5 | 7 |
| 2008 | 12 | 22 |
| 2009 | 8 | 19 |
| 2010 | 12 | 22 |
| 2011 | 22 | 17 |
| 2012 | 18 | 43 |
| 2013 | 29 | 28 |
| 2014 | 30 | 24 |
| 2015 | 37 | 38 |
| 2016 | 55 | 37 |
| 2017 | 34 | 25 |
| 2018 | 28 | 27 |
| 2019 | 27 | 20 |
| 2020 | 32 | 30 |
| 2021 | 26 | 26 |
| 2022 | 19 | 29 |
| 2023 | 18 | 21 |
| 2024 | 29 | 13 |
| 2025 | 18 | 12 |
| 2026 | 6 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device for in-memory computing16 Jun 2026US 12,658,256 B2Macronix International Co., Ltd.
- Delta-sigma modulation neurons for high-precision training of memristive synapses in deep neural networks19 May 2026US 12,632,738 B2Technion Research & Development Foundation Limited
- Semiconductor memory devices with differential threshold voltages7 Apr 2026US 12,597,466 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive random access memory and memory mini-array thereof with improved reliability31 Mar 2026US 12,592,280 B2United Microelectronics Corp.
- Memory cell with a variable element and a phase change memory17 Feb 2026US 12,557,564 B2International Business Machines Corporation
- Efuse bit-cell in stacking structure13 Aug 2026US 2026/0237448 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory devices with differential threshold voltages16 Jul 2026US 2026/0204314 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic device comprising a memory element7 May 2026US 2026/0128067 A1STMicroelectronics International N. V.
- Reducing disturbance in crossbar array circuits12 Mar 2026US 2026/0073981 A1TetraMem Inc.
- Semiconductor device4 Dec 2025US 2025/0372139 A1Renesas Electronics Corporation
Most cited
By later US patents
- Programmable resistive device and memory using diode as selector332US 9,818,478 B2Attopsemi Technology Co., LTD · 2017
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004
- Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements193US 6,531,373 B2Ovonyx, Inc. · 2003
- Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array188US 6,462,984 B1Intel Corporation · 2002
- Isolating phase change material memory cells170US 6,576,921 B2Intel Corporation · 2003