Resistive random access memory and memory mini-array thereof with improved reliability

A memory mini-array comprising:

• a first diffusion layer formed along a first direction;
• a second diffusion layer formed along the first direction;
• a first polysilicon layer formed along a second direction and at least partially overlapped with the first diffusion layer and the second diffusion layer, wherein the first direction is perpendicular to the second direction;
• a second polysilicon layer formed along the second direction and at least partially overlapped with the first diffusion layer and the second diffusion layer;
• a third polysilicon layer formed along the second direction and at least partially overlapped with the first diffusion layer and the second diffusion layer;
• a fourth polysilicon layer formed along the second direction and at least partially overlapped with the first diffusion layer and the second diffusion layer, wherein the third polysilicon layer is formed between the second polysilicon layer and the fourth polysilicon layer;
• a first resistive memory element formed at least partially overlapped with the first diffusion layer and between the first polysilicon layer and the second polysilicon layer;
• a second resistive memory element formed at least partially overlapped with the second diffusion layer and between the first polysilicon layer and the second polysilicon layer;
• a third resistive memory element formed at least partially overlapped with the first diffusion layer and between the third polysilicon layer and the fourth polysilicon layer;
• and
• a fourth resistive memory element formed at least partially overlapped with the second diffusion layer and between the third polysilicon layer and the fourth polysilicon layer;
• wherein the first polysilicon layer, the second polysilicon layer, the first resistive memory element and the second resistive memory element are corresponding to a first memory;
• the third polysilicon layer, the fourth polysilicon layer, the third resistive memory element and the fourth resistive memory element are corresponding to a second memory;
• and
• the memory mini-array comprises the first memory and the second memory.

A memory comprising:

• a first diffusion layer;
• a second diffusion layer;
• a first conductive layer formed above the first diffusion layer;
• a second conductive layer formed above the second diffusion layer;
• a first resistive memory element formed above the first conductive layer;
• a second resistive memory element formed above the second conductive layer;
• a first contact element coupled to the first diffusion layer and the first conductive layer and formed between the first diffusion layer and the first conductive layer;
• a second contact element coupled to the second diffusion layer and the second conductive layer and formed between the second diffusion layer and the second conductive layer;
• a first conductive via coupled to the first conductive layer and the first resistive memory element and formed between the first conductive layer and the first resistive memory element;
• and
• a second conductive via coupled to the second conductive layer and the second resistive memory element and formed between the second conductive layer and the second resistive memory element;
• wherein the first conductive layer and the second conductive layer are formed of a same conductive layer.