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US 6,576,921 B2Granted
Isolating phase change material memory cells
AssigneeIntel Corporation
InventorTyler Lowrey
Life of this patent
Estimating the term…
Abstract
A phase change memory may have reduced reverse bias current by providing a N-channel field effect transistor coupled between a bipolar transistor and a conductive line such a row line. By coupling the gate of the MOS transistor to the row line, reverse bias current in unselected cells or in the standby mode may be reduced.
Claims18
A memory comprising:
- a phase change memory element including a first and second node;
- a bipolar transistor coupled to said first node;
- and
- a N-channel field effect transistor coupled to said bipolar transistor.
1 more element
A memory comprising:
- a phase change memory element;
- a pair of conductive lines;
- a bipolar transistor coupled between the phase change memory element and at least one of said lines;
- a switch coupled between said bipolar transistor and one of said lines, said switch arranged to reduce the leakage current from said bipolar transistor.
1 more element
Dependencies are inferred from the claim text.