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US 6,531,373 B2Granted
Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
AssigneeOvonyx, Inc.
InventorsManzur Gill, Tyler Lowrey
Life of this patent
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Abstract
The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
Claims15
A process of forming a memory device comprising:
- forming an insulator layer in a silicon substrate;
- patterning a first conductivity type portion over the insulator layer and patterning a second conductivity type portion adjacent to the first conductivity type to form an isolation device;
- forming a lower electrode on the second conductivity type portion;
- and
- introducing a volume of phase-change memory material over the lower electrode.
2 more elements
Dependencies are inferred from the claim text.