G11C 2213/72
Array wherein the access device being a diode
G11C2213/72 (Array wherein the access device being a diode) appears on 1,495 US grants and 1,583 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,495
- Published applications
- 1,583
- Assignees
- 181
- Inventors
- 1,406
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 1 |
| 2002 | 9 | 7 |
| 2003 | 12 | 31 |
| 2004 | 20 | 32 |
| 2005 | 32 | 39 |
| 2006 | 24 | 40 |
| 2007 | 32 | 55 |
| 2008 | 38 | 81 |
| 2009 | 35 | 139 |
| 2010 | 79 | 157 |
| 2011 | 129 | 162 |
| 2012 | 159 | 122 |
| 2013 | 163 | 99 |
| 2014 | 119 | 89 |
| 2015 | 108 | 64 |
| 2016 | 79 | 56 |
| 2017 | 59 | 54 |
| 2018 | 49 | 58 |
| 2019 | 68 | 69 |
| 2020 | 70 | 70 |
| 2021 | 66 | 64 |
| 2022 | 45 | 44 |
| 2023 | 26 | 27 |
| 2024 | 30 | 11 |
| 2025 | 22 | 9 |
| 2026 | 5 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device18 Aug 2026US 12,713,841 B2Kioxia Corporation
- Semiconductor device including resistance change layer with metal-organic framework4 Aug 2026US 12,701,853 B2SK hynix Inc.
- Elemental composition tuning for chalcogenide based memory arranged in a plurality of decks24 Mar 2026US 12,588,430 B2SK Hynix NAND Product Solutions Corp.
- Technologies for dynamic current mirror biasing for memory cells10 Mar 2026US 12,573,453 B2Intel Corporation
- Non-volatile memory device having PN diode10 Mar 2026US 12,575,112 B2
- Elemental composition tuning for chalcogenide based memory arranged in a plurality of decks2 Jul 2026US 2026/0190875 A1SK Hynix NAND Product Solutions Corp. (dba Solidigm)
- Counter-based sense amplifier method for memory cells4 Jun 2026US 2026/0155197 A1Micron Technology, Inc.
- Resistive memory device1 Jan 2026US 2026/0006797 A1Samsung Electronics Co., Ltd.
- Bipolar selector with independently tunable threshold voltages6 Nov 2025US 2025/0344402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device with unipolar selector23 Oct 2025US 2025/0329364 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Electrically erasable memory elements characterized by reduced current and improved thermal stability456US 5,534,712 AEnergy Conversion Devices, Inc. · 1996
- Three-dimensional (3D) programmable device422US 6,501,111 B1Intel Corporation · 2002
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998