Back to results
US 12,588,430 B2Granted
Elemental composition tuning for chalcogenide based memory arranged in a plurality of decks
AssigneeSK Hynix NAND Product Solutions Corp.
InventorsJohn M. Nugent, Kumar R. Virwani, Fred Daniel Gealy
Life of this patent
Estimating the term…
Abstract
A memory device including a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material; wherein a first deck of the plurality of decks comprises first memory cells with storage elements deposited at a first initial composition of a plurality of elements; and a second deck of the plurality of decks comprises second memory cells with storage elements deposited at a second initial composition of the plurality of elements.
Claims20
A memory device including:
- a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material;
- wherein:
- a first deck and a third deck of the plurality of decks comprise first memory cells with storage elements deposited at a first initial composition of a plurality of elements;
- a second deck and a fourth deck of the plurality of decks comprise second memory cells with storage elements deposited at a second initial composition of the plurality of elements different from the first initial composition of the plurality of elements;
- and
- wherein the first initial composition and second initial composition are selected such that after a particular number of program cycles have been performed to the first memory cells and the particular number of program cycles have been performed to the second memory cells:
- a third altered local composition of the first memory cells more closely matches a fourth altered local composition of the second memory cells than the first initial composition and the second initial composition.
4 more elements
A method comprising:
- forming a first deck and a third deck of first memory cells, wherein forming the first deck and the third deck comprises depositing a plurality of storage elements of the first memory cells at a first initial composition of a plurality of elements of a chalcogenide material;
- forming a second deck and a fourth deck of second memory cells, wherein forming the second deck and the fourth deck of second memory cells comprises depositing a plurality of storage elements of the second memory cells at a second initial composition of the plurality of elements different from the first initial composition of the plurality of elements of the chalcogenide material;
- and
- selecting the first initial composition and second initial composition such that after a particular number of program cycles have been performed to the first memory cells and the particular number of program cycles have been performed to the second memory cells:
- a third altered local composition of the first memory cells more closely matches a fourth altered local composition of the second memory cells than the first initial composition and the second initial composition.
2 more elements
A system comprising:
- a storage device controller;
- and
- at least one memory chip coupled to the storage device controller, wherein a memory chip comprises:
- a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material;
- wherein:
- a first deck and a third deck of the plurality of decks comprise first memory cells with storage elements deposited at a first initial composition of a plurality of elements;
- a second deck and a fourth deck of the plurality of decks comprise second memory cells with storage elements deposited at a second initial composition of the plurality of elements different from the first initial composition of the plurality of elements;
- and
- wherein the first initial composition and second initial composition are selected such that after a particular number of program cycles have been performed to the first memory cells and the particular number of program cycles have been performed to the second memory cells:
- a third altered local composition of the first memory cells more closely matches a fourth altered local composition of the second memory cells than the first initial composition and the second initial composition.
7 more elements
Dependencies are inferred from the claim text.