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US 12,701,853 B2Granted
Semiconductor device including resistance change layer with metal-organic framework
AssigneeSK hynix Inc.
InventorWon Tae Koo
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Abstract
A semiconductor device includes a first electrode and a second electrode that are spaced apart from each other, and a resistance change layer disposed between the first and second electrodes and including a metal-organic framework having cavities. The resistance change layer includes channels disposed in the cavities, receiving metal ions provided from one electrode of the first and second electrodes.
Claims20
A semiconductor device comprising:
- a first electrode and a second electrode that are spaced apart from each other;
- and
- a resistance change layer disposed between the first and second electrodes and including two-dimensional metal-organic frameworks having cavities,
- wherein the two-dimensional metal-organic frameworks are stacked in a thickness direction of the resistance change layer,
- wherein the resistance change layer comprises channels disposed in the cavities, the channels receiving metal ions provided from one electrode of the first and second electrodes,
- wherein cavities of the two-dimensional metal-organic frameworks are overlapped in the thickness direction to form the channels.
3 more elements
A semiconductor device comprising:
- first and second conductive lines that are disposed on different planes;
- and
- a pillar structure disposed in a region where the first and second conductive lines intersect, the pillar structure including a first electrode, a resistance change layer including two-dimensional metal-organic frameworks having cavities, and a second electrode,
- wherein the two-dimensional metal-organic frameworks are stacked in a thickness direction of the resistance change layer,
- wherein the resistance change layer comprises channels disposed in the cavities, the channels receiving metal ions provided from one electrode of the first and second electrodes,
- wherein cavities of the two-dimensional metal-organic frameworks are overlapped in the thickness direction to form the channels.
3 more elements
Dependencies are inferred from the claim text.