Non-volatile memory device having PN diode

A non-volatile memory circuit, comprising:

• a non-volatile memory device array including a plurality of non-volatile memory devices arranged by rows and columns, a first writing wire, a second writing wire which is conductive, and a selection wire;
• and
• a control circuit configured to operably control the non-volatile memory device array so as to read from or write into the non-volatile memory devices;
• an insulation layer, which is electrically insulative;
• wherein each of the plurality of non-volatile memory devices includes:
• a first PN diode having a first anode end and a first cathode end, which is formed in a monocrystalline silicon layer, a monocrystalline germanium layer or a monocrystalline gallium arsenide layer on the insulation layer;
• a second PN diode having a second anode end and a second cathode end, the second PN diode formed in the monocrystalline silicon layer, monocrystalline germanium layer or monocrystalline gallium arsenide layer on the insulation layer;
• a second connection conduction unit comprising a first portion and a second portion, the first portion of the second connection conduction unit stacked and connected on the insulation layer, the second anode end of the second PN diode stacked and connected on the first portion of the second connection conduction unit, the first portion of the second connection conduction unit disposed between the second anode end of the second PN diode and the insulation layer, the second anode end of the second PN diode disposed between the first portion of the second connection conduction unit and the second cathode end of the second PN diode, and the second portion of the second connection conduction unit stacked and connected on the first portion of the second connection conduction unit;
• and
• a memory unit, which is located on the first PN diode, wherein the memory unit is electrically connected to the first cathode end of the first PN diode;
• wherein the first writing wire is conductive, and the first writing wires is electrically connected to the first anode end of the first PN diode of a first non-volatile memory device;
• wherein the second writing wire is electrically connected to the second cathode end of the second PN diode of the first non-volatile memory device;
• wherein the selection wire is conductive, wherein the selection wire is located on and is electrically connected to the memory unit of the first non-volatile memory device;
• wherein the first writing wire is disposed between the first anode end of the first PN diode of the first non-volatile memory device and the insulation layer, and the first anode end of the first PN diode of the first non-volatile memory device is disposed between the first writing wire and the first cathode end of the first PN diode of the first non-volatile memory device;
• and
• wherein in a case where the first non-volatile memory device is selected for a first data to be written into, a first current flows through the first PN diode of the first non-volatile memory device, so as to write the first data into the memory unit of the first non-volatile memory device;
• and
• wherein in a case where the first non-volatile memory device is selected to for a second data to be written into, a second current flows through the second portion of the second connection conduction unit, the first portion of the second connection conduction unit, and the second PN diode of the first non-volatile memory device, so as to write the second data into the memory unit of the first non-volatile memory device.

A non-volatile memory device array comprising:

• an insulation layer, which is electrically insulative;
• a plurality of non-volatile memory devices arranged by rows and columns, each of the plurality of non-volatile memory devices comprising:
• a first PN diode having a first anode end and a first cathode end, which is formed in a monocrystalline silicon layer, a monocrystalline germanium layer or a monocrystalline gallium arsenide layer on the insulation layer;
• a second PN diode having a second anode end and a second cathode end, the second PN diode formed in the monocrystalline silicon layer, monocrystalline germanium layer or monocrystalline gallium arsenide layer on the insulation layer;
• a third PN diode having a third anode end and a third cathode end;
• a fourth PN diode having a fourth anode end and a fourth cathode end;
• and
• a memory unit, which is located on the first PN diode, wherein the memory unit is electrically connected to the first cathode end of the first PN diode;
• a selection wire which is conductive, wherein the selection wire is located on and is electrically connected to the memory unit of a first non-volatile memory device of the plurality of non-volatile memory devices;
• and
• a first writing wire which is conductive, wherein the first writing wire is electrically connected to the first anode end of the first PN diode of the first non-volatile memory device;
• and
• a second writing wire which is conductive, wherein the second writing wire is electrically connected to the second anode end of the second PN diode of the first non-volatile memory device;
• wherein the first writing wire is disposed between the insulation layer and the first PN diode of the first non-volatile memory device, and the first anode end of the first PN diode is disposed between the first writing wire and the first cathode end of the first PN diode;
• wherein the second writing wire is disposed between the insulation layer and the second PN diode of the first non-volatile memory device, and the second anode end of the second PN diode is disposed between the second writing wire and the second cathode end of the second PN diode;
• wherein in a case where the first non-volatile memory device is selected for a first data to be written into, a first current flows through the first PN diode and the third PN diode of the first non-volatile memory device, so as to write the first data into the memory unit of the first non-volatile memory device;
• wherein in a case where the first non-volatile memory device is selected to for a second data to be written into, a second current flows through the second PN diode and the fourth PN diode of the first non-volatile memory device, so as to write the second data into the memory unit of the first non-volatile memory device.