Resistive memory device

A method of manufacturing a resistive memory device, the method comprising:

• forming a first conductive line on a substrate;
• forming a plurality of memory cells on the first conductive line, each of the plurality of memory cells comprising a selection element pattern and a resistive memory pattern;
• and
• forming a plurality of second conductive lines on the plurality of memory cells,
• wherein the selection element pattern includes a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, and
• wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

A method of manufacturing a resistive memory device, the method comprising:

• forming a plurality of first conductive lines on a substrate, each of the plurality of first conductive lines extending in a first lateral direction;
• forming a plurality of memory cells on each of the plurality of first conductive lines;
• and
• forming a plurality of second conductive lines on the plurality of memory cells, each of the plurality of second conductive lines extending in a second lateral direction intersecting with the first lateral direction,
• wherein the forming of the plurality of memory cells comprises:
• forming a lower electrode layer on the plurality of first conductive lines;
• forming a selection element layer on the lower electrode layer,
• forming a resistive memory layer on the selection element layer, and
• forming a selection element pattern and a resistive memory pattern by anisotropically etching the selection element layer and the resistive memory layer,
• wherein the selection element layer includes a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, and
• wherein the selection element layer includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element layer is variable according to a position within the selection element layer.

A method of manufacturing a resistive memory device, the method comprising:

• forming a plurality of first conductive lines on a substrate, each of the plurality of first conductive lines extending in a first lateral direction;
• forming a plurality of memory cells on each of the plurality of first conductive lines, the plurality of memory cells being arranged in a line in the first lateral direction on each of the plurality of first conductive lines, the forming of the plurality of memory cells comprises:
• forming a lower electrode layer on the plurality of first conductive lines;
• forming a selection element layer on the lower electrode layer;
• forming a resistive memory layer on the selection element layer;
• and
• forming a selection element pattern and a resistive memory pattern by anisotropically etching the selection element layer and the resistive memory layer;
• forming an encapsulation liner conformally cover sidewalls of each of the plurality of memory cells;
• forming a gap-fill insulating film on the encapsulation liner to fill respective spaces between the plurality of memory cells;
• and
• forming a plurality of second conductive lines on plurality of memory cells, each of the plurality of second conductive lines extending in a second lateral direction intersecting with the first lateral direction,
• wherein the selection element layer includes a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, and
• wherein the selection element layer includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element layer is variable according to a position within the selection element layer.