G11C 2213/78
Array wherein the memory cells of a group share an access device
Official title: Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
G11C2213/78 (Array wherein the memory cells of a group share an access device) appears on 263 US grants and 264 published applications in this corpus.
Search patents in G11C- Granted patents
- 263
- Published applications
- 264
- Assignees
- 86
- Inventors
- 501
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 0 |
| 2003 | 2 | 1 |
| 2004 | 0 | 2 |
| 2005 | 2 | 7 |
| 2006 | 7 | 10 |
| 2007 | 8 | 6 |
| 2008 | 3 | 12 |
| 2009 | 6 | 11 |
| 2010 | 8 | 12 |
| 2011 | 12 | 12 |
| 2012 | 10 | 9 |
| 2013 | 10 | 13 |
| 2014 | 16 | 19 |
| 2015 | 21 | 30 |
| 2016 | 31 | 21 |
| 2017 | 27 | 11 |
| 2018 | 12 | 10 |
| 2019 | 16 | 22 |
| 2020 | 18 | 14 |
| 2021 | 7 | 6 |
| 2022 | 12 | 12 |
| 2023 | 10 | 12 |
| 2024 | 17 | 6 |
| 2025 | 5 | 5 |
| 2026 | 2 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Techniques for parallel memory cell access19 May 2026US 12,633,344 B2Micron Technology, Inc.
- Crossbar circuits utilizing current-mode digital-to-analog converters14 Apr 2026US 12,603,117 B2TetraMem Inc.
- Sparse piers for three-dimensional memory arrays13 May 2025US 12,302,766 B2Micron Technology, Inc.
- Spike current suppression in a memory array25 Mar 2025US 12,260,908 B2Micron Technology, Inc.
- Memory array structure4 Mar 2025US 12,243,619 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device comprising an array of memory cells7 May 2026US 2026/0128068 A1
- Integrated circuit including efuse cell27 Nov 2025US 2025/0364066 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sparse piers for three-dimensional memory arrays23 Oct 2025US 2025/0331433 A1Micron Technology, Inc.
- Memory array structure12 Jun 2025US 2025/0191628 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and method of forming the same17 Apr 2025US 2025/0124955 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Multilevel phase-change memory element and operating method118US 7,254,059 B2Industrial Technology Research Institut · 2007
- Cross point memory cell with distributed diodes and method of making same100US 7,733,685 B2SanDisk 3D LLC · 2010
- Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same92US 8,183,665 B2Nantero, Inc. · 2012
- Cross-point memory architecture with improved selectivity87US 7,046,550 B1International Business Machines Corporation · 2006