Memory array structure

A memory array structure, comprising:

• a word array, storing an N-bit word and comprising:
• a plurality of first memory structures, wherein each first memory structure comprises a first transistor and a first memory element, the first transistor is coupled to a first select line, and the first memory element is coupled to a first bit line;
• and
• a plurality of second memory structures, wherein each second memory structure comprises a second transistor and a plurality of second memory elements, each second memory element is coupled to a corresponding second bit line, and the second transistor is coupled to a second select line.

A method for operating a memory structure, comprising:

• receiving, through a first bit line coupled to a first memory element of the memory structure, a first bit line signal;
• receiving, through a second bit line coupled to a second memory element of the memory structure, a second bit line signal;
• and
• receiving, through a select line coupled a transistor of the memory structure, a first select line signal, wherein a difference of a magnitude of the first bit line signal and a magnitude of the select line signal is significantly equal to two times a magnitude of the second bit line signal.