G11C 2213/73
Array where access device function
Official title: Array where access device function, e.g. diode function, being merged with memorizing function of memory element
G11C2213/73 (Array where access device function) appears on 222 US grants and 248 published applications in this corpus.
Search patents in G11C- Granted patents
- 222
- Published applications
- 248
- Assignees
- 61
- Inventors
- 366
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 1 | 3 |
| 2008 | 0 | 1 |
| 2009 | 2 | 2 |
| 2010 | 0 | 2 |
| 2011 | 3 | 10 |
| 2012 | 3 | 11 |
| 2013 | 12 | 13 |
| 2014 | 15 | 15 |
| 2015 | 15 | 9 |
| 2016 | 11 | 7 |
| 2017 | 12 | 11 |
| 2018 | 11 | 16 |
| 2019 | 12 | 22 |
| 2020 | 27 | 22 |
| 2021 | 19 | 20 |
| 2022 | 24 | 32 |
| 2023 | 18 | 22 |
| 2024 | 19 | 16 |
| 2025 | 12 | 6 |
| 2026 | 5 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Technologies for dynamic biasing for memory cells16 Jun 2026US 12,658,253 B2Intel Corporation
- Resistive switching memory device including dual active layer and array including the same12 May 2026US 12,628,575 B2Research & Business Foundation Sungkyunkwan University
- Field-programmable ferro-diodes for reconfigurable in-memory-computing7 Apr 2026US 12,597,456 B2The Trustees of the University of Pennsylvania
- Three-state programming of memory cells3 Mar 2026US 12,567,463 B2Micron Technology, Inc.
- Socket design for a memory device10 Feb 2026US 12,548,621 B2Micron Technology, Inc.
- Three-state programming of memory cells11 Jun 2026US 2026/0162720 A1Micron Technology, Inc.
- Socket design for a memory device4 Jun 2026US 2026/0155173 A1Micron Technology, Inc.
- Memory device, memory system includimg the memory device, and operating method of the memory system12 Mar 2026US 2026/0073984 A1SK hynix Inc.
- Differential write and read for selector only memory1 Jan 2026US 2026/0004848 A1SanDisk Technologies LLC
- Method of manufacturing semiconductor memory device including ovonic threshold switch film1 Jan 2026US 2026/0006799 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method and apparatus for biasing selected and unselected array lines when writing a memory array98US 6,618,295 B2Matrix Semiconductor, Inc. · 2003
- Double-polarity memory read62US 9,799,381 B1Intel Corporation · 2017
- Self-selecting PCM device not requiring a dedicated selector transistor41US 8,847,186 B2Micron Technology, Inc. · 2014
- Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same28US 8,218,350 B2Axon Technologies Corporation · 2012
- Asymmetric correlated electron switch operation28US 9,755,146 B2Arm Limited · 2017