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US 8,218,350 B2Granted
Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
AssigneeAxon Technologies Corporation
InventorMichael N. Kozicki
Life of this patent
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Abstract
A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
Claims20
A programmable structure, comprising:
- a first electrode comprising semiconductor material;
- an ion conductor formed of an ion conductive material and conductive ions proximate the first electrode;
- and
- a second electrode proximate the ion conductor,
- wherein the structure comprises a diode formed from a portion of the first electrode and a conductive region within the ion conductor and wherein the diode has a breakdown voltage of less than 5 volts.
2 more elements
A programmable structure, comprising:
- a first electrode comprising semiconductor material;
- an ion conductor formed of an ion conductive material and conductive ions proximate the first electrode;
- and
- a second electrode proximate the ion conductor,
- wherein the structure comprises a diode formed from a portion of the first electrode and a conductive region within the ion conductor and wherein the diode has a breakdown voltage of more than 10 volts.
2 more elements
Dependencies are inferred from the claim text.