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US 8,847,186 B2Granted
Self-selecting PCM device not requiring a dedicated selector transistor
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Agostino Pirovano
Life of this patent
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Abstract
A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture.
Claims6
A Phase-Change Memory (PCM), comprising:
- a first metal line;
- a second metal line;
- a dielectric between the first and second metal lines;
- a first barrier between the first metal line and the dielectric and contacting the first metal line and the dielectric;
- a second barrier between the second metal line and the dielectric and contacting the second metal line and the dielectric;
- a first memory cell having an oxide-based material including an n-type Zinc Oxide (ZnO) material in direct contact with a natural p-type crystalline PCM material to form a diode junction embedded in the PCM material, the ZnO material contacting the first metal line;
- first material arranged in a stack with the ZnO material and the PCM material;
- a second memory cell having an oxide-based material including an n-type ZnO material in direct contact with a natural p-type crystalline PCM material to form a diode junction embedded in the PCM material, the ZnO material contacting the second metal line;
- and
- a second material arranged in a stack with the ZnO material and the PCM material of the second memory cell.
7 more elements
Dependencies are inferred from the claim text.