C23C 16/45553
Characterized by the use of precursors specially adapted for ald
Official title: {characterized by the use of precursors specially adapted for ALD}
C23C16/45553 (Characterized by the use of precursors specially adapted for ald) appears on 1,527 US grants and 2,527 published applications in this corpus.
Search patents in C23C- Granted patents
- 1,527
- Published applications
- 2,527
- Assignees
- 371
- Inventors
- 3,211
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 4 |
| 2002 | 5 | 13 |
| 2003 | 7 | 21 |
| 2004 | 18 | 31 |
| 2005 | 17 | 36 |
| 2006 | 25 | 47 |
| 2007 | 16 | 39 |
| 2008 | 18 | 47 |
| 2009 | 32 | 40 |
| 2010 | 29 | 32 |
| 2011 | 17 | 32 |
| 2012 | 24 | 40 |
| 2013 | 28 | 59 |
| 2014 | 48 | 47 |
| 2015 | 45 | 66 |
| 2016 | 51 | 88 |
| 2017 | 66 | 88 |
| 2018 | 67 | 114 |
| 2019 | 84 | 163 |
| 2020 | 100 | 174 |
| 2021 | 119 | 197 |
| 2022 | 126 | 232 |
| 2023 | 128 | 236 |
| 2024 | 139 | 194 |
| 2025 | 183 | 275 |
| 2026 | 134 | 212 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method of forming a layer by ALD6 Oct 2026US 12,753,497 B2ASM IP Holding B. V.
- Methods of growing metal-containing films6 Oct 2026US 12,753,498 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Area selective deposition of metal film on silicon containing surfaces utilizing alcohols8 Oct 2026US 2026/0308761 A1Merck Patent GmbH
- Process for preparing of transition metal-containing films8 Oct 2026US 2026/0308762 A1BASF SE
- Fluorination of ancillary ligands of group (iii) precursors and their applications in vapor depositions8 Oct 2026US 2026/0308763 A1American Air Liquide, Inc.
- Functionalized organotin precursors and related methods1 Oct 2026US 2026/0297117 A1Entegris, Inc.
- Method of forming a structure using selective deposition on a metal surface1 Oct 2026US 2026/0297729 A1ASM IP Holding B. V.
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Lanthanum hafnium oxide dielectrics650US 7,235,501 B2Micron Technology, Inc. · 2007
- Process for producing zirconium oxide thin films621US 7,754,621 B2ASM International N.V. · 2010