Fluorination of ancillary ligands of group (iii) precursors and their applications in vapor depositions
AssigneeAmerican Air Liquide, Inc.
InventorsBradley McKEOWN, Kayla Diemoz
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AssigneeAmerican Air Liquide, Inc.
InventorsBradley McKEOWN, Kayla Diemoz
Estimating the term…
A composition for deposition of a film comprises a Group (III)-containing precursor containing at least one fluorocarbon group on at least one of the ancillary ligands. The Group (III)-containing precursor is tris(2-(dimethylamino)methyl-1,1,1,3,3,3-hexafluoropropan-2-ol)indium, represented as (F-dmamp)3In, tris(2-(ethylmethylamino)methyl-1,1,1,3,3,3-hexafluoropropan-2-ol)indium, Tris(1,1,1,3,3,3-hexafluoro-2-(methoxymethyl)propan-2-ol)indium, Tris(1,1,1,3,3,3-hexafluoro-2-(methoxymethyl)propan-2-ol)aluminum, or bis((2-((dimethylamino)methyl)-1,1,1,3,3,3-hexafluoropropan-2-ol)(ethoxy)aluminum.
A composition for deposition of a film comprising a Group (III)-containing precursor, the Group (III)-containing precursor being of the formulae:
Dependencies are inferred from the claim text.