Methods of growing metal-containing films

A method of forming an electronic device, the method comprising:

• sequentially exposing a surface to a first metal halide precursor, a first reducing agent, and a first reactant to deposit a first metal-containing film comprising a metal nitride, the first metal-containing film defining a bottom electrode, wherein the first metal-containing film is a first metal rich metal-containing film having a metal content greater than a stoichiometric ratio of other atoms therein,
• depositing a high-k dielectric layer on the bottom electrode;
• and
• sequentially exposing the high-k dielectric layer to a second metal halide precursor, a second reducing agent, wherein the second reducing agent comprises:
• and a second reactant to deposit a second metal-containing film comprising a metal nitride, the second metal-containing film defining a top electrode, the top electrode on the high-k dielectric layer, wherein the second metal-containing film is a second metal rich metal-containing film having a metal content greater than a stoichiometric ratio of other atoms therein.

A method of reducing equivalent oxide thickness (EOT) penalty in an electronic device, the method comprising:

• exposing a substrate surface to a metal precursor, wherein the metal precursor comprises a metal halide having a general formula MXaRb, where M is a metal atom, each X is a halogen independently selected from F, Cl, Br and I, each R is independently selected from a C1-C6 alkyl, an N-donor ligand, a carbonyl, or a cyclopentadienyl, a is in a range of 1 to 6, and b is in a range of 1 to 6;
• then
• exposing the substrate surface to a reducing agent;
• and then
• exposing the substrate surface to a reactant to form a metal-containing film comprising a metal nitride, wherein the metal-containing film is a metal rich metal-containing film having a metal content greater than a stoichiometric ratio of other atoms therein, and
• wherein the reducing agent comprises: