H10W 72/01338
In gaseous form
Official title: {in gaseous form, e.g. by CVD or PVD}
H10W72/01338 (In gaseous form) appears on 183 US grants and 251 published applications in this corpus.
Search patents in H10W- Granted patents
- 183
- Published applications
- 251
- Assignees
- 102
- Inventors
- 457
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 3 |
| 2010 | 0 | 3 |
| 2011 | 2 | 2 |
| 2012 | 1 | 9 |
| 2013 | 6 | 14 |
| 2014 | 15 | 27 |
| 2015 | 21 | 19 |
| 2016 | 13 | 17 |
| 2017 | 15 | 13 |
| 2018 | 15 | 16 |
| 2019 | 12 | 14 |
| 2020 | 16 | 15 |
| 2021 | 14 | 16 |
| 2022 | 10 | 20 |
| 2023 | 13 | 15 |
| 2024 | 12 | 19 |
| 2025 | 7 | 13 |
| 2026 | 11 | 15 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of die attach with adhesive layer containing graphene-coated core11 Aug 2026US 12,708,038 B2STATS ChipPAC Pte. Ltd.
- Tantalum doped ruthenium layers for interconnects4 Aug 2026US 12,701,989 B2APPLIED Materials.Inc.
- Heat dissipation in semiconductor devices28 Jul 2026US 12,696,763 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor package and method of manufacturing the semiconductor package7 Jul 2026US 12,677,679 B2Samsung Electronics Co., Ltd.
- IC package with dummy die heat spreader23 Jun 2026US 12,666,963 B2Samsung Electronics Co., Ltd.
- Heat dissipation in semiconductor devices8 Oct 2026US 2026/0314410 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor package and method of manufacturing the semiconductor package1 Oct 2026US 2026/0305403 A1Samsung Electronics Co., Ltd.
- Semiconductor package27 Aug 2026US 2026/0256007 A1Electronics and Telecommunications Research Institute
- Heat Dissipation Substrate for a Power Semiconductor Module, Manufacturing Method thereof, and Convertor including the same13 Aug 2026US 2026/0239967 A1Lx Semicon Co., Ltd.
- Heat Dissipation Substrate for Power Semiconductor, Power Semiconductor Module including the same, Power Convertor including the same, and Manufacturing method thereof13 Aug 2026US 2026/0239968 A1Lx Semicon Co., Ltd.
Most cited
By later US patents
- Method and structure for wafer to wafer bonding in semiconductor packaging237US 8,377,798 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Trap rich layer for semiconductor devices111US 8,466,036 B2Io Semiconductor, Inc. · 2013
- Electrolyte for a solid-state battery33US 10,581,115 B2Corning Incorporated · 2020
- Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region24US 8,461,017 B2Soitec · 2013
- Bondable device including a hydrophilic layer14US 9,773,741 B1QUALCOMM Incorporated · 2017