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US 9,773,741 B1Granted
Bondable device including a hydrophilic layer
AssigneeQUALCOMM Incorporated
InventorsShiqun Gu, Yang Du, William Xia
Life of this patent
Estimating the term…
Abstract
An apparatus includes a first component layer. The component layer includes a first semiconductor device. The apparatus further includes a first hydrophilic layer and a first hydrophobic layer. The first hydrophobic layer is positioned between the first component layer and the first hydrophilic layer. The apparatus further includes a first contact extending through the first hydrophobic layer and the first hydrophilic layer.
Claims30
An apparatus comprising:
- a substrate;
- a first component layer including a first semiconductor device;
- a first hydrophilic layer;
- a first hydrophobic layer positioned between the first component layer and the first hydrophilic layer, the first component layer positioned between the first hydrophobic layer and the substrate;
- and
- a first contact extending through the first hydrophobic layer and the first hydrophilic layer.
3 more elements
A method of forming a self-aligning device, the method comprising:
- forming a first component layer on a substrate;
- forming a first hydrophobic layer on the first component layer;
- forming a first hydrophilic layer on the first hydrophobic layer;
- and
- forming a first contact extending through the first hydrophobic layer and the first hydrophilic layer.
2 more elements
An apparatus comprising:
- first means for processing electrical signals;
- first means for attracting water;
- first means for repelling water positioned between the first means for processing electrical signals and the first means for attracting water, the first means for processing electrical signals positioned between the first means for repelling water and a substrate;
- and
- first means for contacting extending through the first means for attracting and the first means for repelling.
2 more elements
A self-aligned device stack comprising:
- a first semiconductor device;
- a first hydrophobic layer having a first surface area;
- a first hydrophilic layer in contact with the first hydrophobic layer;
- a second hydrophilic layer in contact with the first hydrophilic layer;
- a second hydrophobic layer in contact with the second hydrophilic layer and having a second surface area that is different from the first surface area;
- and
- a second semiconductor device.
4 more elements
Dependencies are inferred from the claim text.