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US 12,701,989 B2Granted
Tantalum doped ruthenium layers for interconnects
AssigneeApplied Materials, Inc.
InventorsShinjae Hwang, Feng Chen, Muthukumar Kaliappan, Michael Haverty
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Abstract
Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer thereon. Apparatuses for performing the methods are also described.
Claims18
A method of forming an interconnect, the method comprising:
- forming a tantalum nitride layer on a substrate;
- forming a ruthenium layer on the tantalum nitride layer;
- and
- exposing the tantalum nitride layer and the ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer.
1 more element
A method of forming an interconnect, the method comprising:
- forming at least one conformal tantalum nitride layer and at least one ruthenium layer on a substrate having a surface with a structure formed therein, the structure extending a distance into the substrate and having sidewalls and a bottom, the bottom comprising a conductive material, the sidewalls comprising a low-k dielectric material comprising one or more of fluorine-doped silicon oxide, organosilicate glass or porous silicon dioxide, the at least one ruthenium layer formed on the at least one conformal tantalum nitride layer;
- and
- exposing the at least one conformal tantalum nitride layer and the at least one ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer comprising greater than or equal to 80 at. % ruthenium.
Dependencies are inferred from the claim text.