Heat Dissipation Substrate for Power Semiconductor, Power Semiconductor Module including the same, Power Convertor including the same, and Manufacturing method thereof

Abstract

The embodiments relate to a heat dissipation substrate for power semiconductors, a power semiconductor module comprising the same, a power convertor comprising the same, and a manufacturing method thereof. A method for manufacturing a heat dissipation substrate for a power semiconductor according to an embodiment may include preparing a first ceramic substrate, forming a bonding metal layer having a first thickness on one surface or the other surface of the first ceramic substrate by sputtering, arranging a metal plate on the first ceramic substrate on which the bonding metal layer may be formed, and performing a hot press process while the metal plate is arranged. In the hot press process step, the bonding metal layer may react with the first ceramic substrate to become an oxide bonding layer.

Dependencies are inferred from the claim text.