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US 8,466,036 B2Granted
Trap rich layer for semiconductor devices
AssigneeIo Semiconductor, Inc.
InventorsChris Brindle, Michael A. Stuber, Stuart B. Molin
Life of this patent
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Abstract
An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.
Claims30
A method comprising:
- forming an active layer for an integrated circuit chip, the active layer including an active device layer and a metal interconnect layer;
- and
- forming a trap rich layer above the active layer, wherein the trap rich layer remains in a final structure for the integrated circuit chip.
An integrated circuit chip comprising:
- an active layer including an active device layer and a metal interconnect layer;
- and
- a trap rich layer located above the active layer;
- wherein the trap rich layer remains in a final structure of the integrated circuit chip.
1 more element
An integrated circuit chip comprising:
- a semiconductor wafer having an active layer, the active layer including an active device layer and a metal interconnected layer;
- and
- a handle wafer bonded to a top side of the semiconductor wafer after formation of the active layer, the handle wafer having a trap rich layer formed before the handle wafer is bonded to the semiconductor wafer;
- wherein the trap rich layer remains in a final structure of the integrated circuit chip.
1 more element
Dependencies are inferred from the claim text.