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US 2026/0239967 A1Published application
Heat Dissipation Substrate for a Power Semiconductor Module, Manufacturing Method thereof, and Convertor including the same
AssigneeLx Semicon Co., Ltd.
InventorsYoung Soo HAN, Nam Tae CHO
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Abstract
A heat dissipation substrate for a power semiconductor module according to an embodiment may include an insulating substrate; a bonding metal layer disposed on the insulating substrate; a diffusion metal layer disposed on the bonding metal layer; and a metal plate disposed on the diffusion metal layer, wherein each of the bonding metal layer and the diffusion metal layer may have a uniform thickness.
Claims15
A heat dissipation substrate for a power semiconductor module, comprising:
- an insulating substrate (210);
- a bonding metal layer (217) on a surface of the insulating substrate (210);
- a diffusion metal layer (223) on the bonding metal layer (217);
- and
- a metal plate (225) disposed on the diffusion metal layer (223),
- wherein at least one of the bonding metal layer (215) and the diffusion metal layer (220) has a uniform thickness and/or a constant thermal expansion coefficient in a direction parallel to the surface of the insulating substrate (210).
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A method for manufacturing a heat dissipation substrate for a power semiconductor module, comprising:
- providing an insulating substrate (210);
- disposing a first bonding metal layer (215) on the insulating substrate (210);
- disposing a first diffusion metal layer (220) on the first bonding metal layer (215);
- arranging a metal plate (225) on the first diffusion metal layer (220);
- and
- performing a hot press process for bonding the metal plate (225) to the insulating substrate (210), wherein the first bonding metal layer (215) is converted to a second bonding metal layer (217), and the first diffusion metal layer (220) is converted to a second diffusion metal layer (223).
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Dependencies are inferred from the claim text.