Semiconductor package and method of manufacturing the semiconductor package

A semiconductor package, comprising:

• a first semiconductor chip having a first front surface and a first rear surface opposite to each other;
• and
• a second semiconductor chip having a second front surface that is bonded to the first rear surface of the first semiconductor chip, the second semiconductor chip having bonding pads that are exposed from the second front surface,
• wherein the first semiconductor chip includes,
• a first substrate having a first surface, and a second surface opposite to the first surface;
• a circuit layer provided on the first surface of the first substrate;
• a through via extending to penetrate through the first substrate, the through via having a first diameter;
• an insulating layer partially covering the through via on the second surface of the first substrate, the insulating layer having an opening that has a first depth from an outer surface of the insulating layer, the opening having a bottom surface that exposes a first end of the through via;
• and
• a conductive pad, having a second diameter, provided on the exposed first end of the through via in the opening of the insulating layer, the conductive pad bonded to the bonding pad of the second semiconductor chip,
• wherein the second diameter of the conductive pad is different from the first diameter of the first through via.

A method of manufacturing a semiconductor package, comprising:

• forming a first semiconductor chip including a first substrate, the first substrate having first and second surfaces opposite to each other;
• forming a second semiconductor chip including a second substrate, the second substrate having third and fourth surfaces opposite to each other;
• and
• arranging the second semiconductor chip on the first semiconductor chip such that a front surface of the second semiconductor chip faces a rear surface of the first semiconductor chip, and bonding pads that are exposed from the front surface of the second semiconductor chip are bonded to conductive pads that are exposed from the rear surface of the first semiconductor chip,
• wherein the forming the first semiconductor chip includes,
• forming a first through via that penetrates the first substrate from an activation layer that is formed on the first surface of the first substrate, the first through via having a first diameter;
• forming an insulating layer that exposes a first end of the first through via on the second surface of the first substrate;
• partially removing the first end of the first through via to a depth from the outer surface of the insulating layer and forming an opening in the insulating layer, the opening having a bottom surface that exposes the first end of the first through via;
• and
• applying a conductive material on the first end of the first through via within the opening of the insulating layer to form the conductive pad that has a second diameter, wherein a diameter of the opening is equal to the first diameter of the first through via.