Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
AssigneeSoitec
InventorsMariam Sadaka, Ionut Radu
Life of this patent
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Abstract
Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.
Claims21
A method of fabricating a semiconductor structure, comprising:
- forming a first semiconductor structure including at least a portion of an integrated circuit on a first substrate;
- implanting ions into a carrier wafer to form a weakened region within the carrier wafer;
- directly bonding the carrier wafer to a first side of the first semiconductor structure;
- processing the first semiconductor structure while the carrier wafer is attached to the first semiconductor structure using the carrier wafer to handle the first semiconductor structure;
- directly bonding a second semiconductor structure including at least a portion of an integrated circuit to a second side of the first semiconductor structure opposite the first side of the semiconductor structure to which the carrier wafer is directly bonded;
- and
- separating a layer of material from the carrier wafer from a remaining portion of the carrier wafer along the weakened region therein.
A method of fabricating a semiconductor structure, comprising:
- implanting ions into a first semiconductor structure and forming a weakened region therein;
- directly bonding a surface of the first semiconductor structure to a surface of a second semiconductor structure to form a bonded semiconductor structure including the first semiconductor structure and the second semiconductor structure;
- handling the bonded semiconductor structure using the first semiconductor structure while removing a portion of the second semiconductor structure and exposing at least one conductive structure extending at least partially through the second semiconductor structure;
- aligning the at least one conductive structure exposed through the second semiconductor structure with at least one conductive structure of a third semiconductor structure;
- heating the bonded semiconductor structure and the third semiconductor structure;
- directly bonding the at least one conductive structure exposed through the second semiconductor structure to the at least one conductive structure of the third semiconductor structure responsive to heating the bonded semiconductor structure and the third semiconductor structure;
- and
- dividing the first semiconductor structure along the weakened region responsive to heating the bonded semiconductor structure and the third semiconductor structure and leaving a portion of the first semiconductor structure on the second semiconductor structure.
Dependencies are inferred from the claim text.