H10W 20/093
By modifying materials of the dielectric parts
Official title: {by modifying materials of the dielectric parts}
H10W20/093 (By modifying materials of the dielectric parts) appears on 3,106 US grants and 3,327 published applications in this corpus.
Search patents in H10W- Granted patents
- 3,106
- Published applications
- 3,327
- Assignees
- 404
- Inventors
- 4,938
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 9 | 0 |
| 1994 | 7 | 0 |
| 1995 | 13 | 0 |
| 1996 | 8 | 0 |
| 1997 | 11 | 0 |
| 1998 | 23 | 0 |
| 1999 | 41 | 0 |
| 2000 | 65 | 0 |
| 2001 | 108 | 47 |
| 2002 | 120 | 143 |
| 2003 | 128 | 135 |
| 2004 | 155 | 172 |
| 2005 | 105 | 180 |
| 2006 | 122 | 183 |
| 2007 | 101 | 141 |
| 2008 | 80 | 164 |
| 2009 | 105 | 145 |
| 2010 | 131 | 123 |
| 2011 | 122 | 108 |
| 2012 | 106 | 98 |
| 2013 | 119 | 95 |
| 2014 | 102 | 91 |
| 2015 | 102 | 117 |
| 2016 | 123 | 133 |
| 2017 | 134 | 118 |
| 2018 | 135 | 135 |
| 2019 | 125 | 137 |
| 2020 | 121 | 149 |
| 2021 | 92 | 114 |
| 2022 | 108 | 159 |
| 2023 | 109 | 134 |
| 2024 | 111 | 124 |
| 2025 | 102 | 123 |
| 2026 | 48 | 59 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods and systems for topography-selective depositions29 Sep 2026US 12,751,229 B2ASM IP Holding B. V.
- Semiconductor device including a metal oxide interface layer and methods for forming the same15 Sep 2026US 12,740,383 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective bottomless graphene lined interconnects8 Sep 2026US 12,733,478 B2Intel Corporation
- Semiconductor device structure and methods of forming the same18 Aug 2026US 12,713,883 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming expandable doped oxide films for advanced semiconductor applications18 Aug 2026US 12,713,887 B2Lam Research Corporation
- Apparatus and method for repairing defect of semiconductor8 Oct 2026US 2026/0311964 A1Tokyo Electron Limited
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314356 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same8 Oct 2026US 2026/0314359 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Treatment of electrodes of mim capacitors24 Sep 2026US 2026/0293168 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of formation24 Sep 2026US 2026/0293637 A1Taiwan Semiconductor Manufacturing Company.Ltd
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