Semiconductor device structure and methods of forming the same

A method, comprising:

• depositing an etch stop layer on a substrate, wherein the substrate comprises a first semiconductor material, and the etch stop layer comprises a second semiconductor material different from the first semiconductor material;
• depositing a first substrate layer on the etch stop layer, wherein the first substrate layer comprises the first semiconductor material;
• forming a plurality of devices on and in the first substrate layer;
• flipping over the substrate;
• removing the substrate;
• removing the etch stop layer;
• depositing a cooling substrate layer on the first substrate layer, wherein the cooling substrate layer comprises a material different from the first semiconductor material;
• and
• depositing a second substrate layer on the cooling substrate layer, wherein the second substrate layer comprises the first semiconductor material.

A semiconductor device structure, comprising:

• an interconnection structure;
• a plurality of active devices disposed over the interconnection structure;
• a first substrate layer disposed over the interconnection structure, wherein the first substrate layer comprises a semiconductor material having a first thermal conductivity;
• a cooling substrate layer disposed on and in contact with an entire top surface of the first substrate layer, wherein the cooling substrate layer comprises a material having a second thermal conductivity substantially greater than the first thermal conductivity;
• and
• a second substrate layer disposed on and in contact with a top surface of the cooling substrate layer, wherein the second substrate comprises a semiconductor material.