H10W 20/096
By contacting with gases, liquids or plasmas
Official title: {by contacting with gases, liquids or plasmas}
H10W20/096 (By contacting with gases, liquids or plasmas) appears on 1,745 US grants and 1,905 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,745
- Published applications
- 1,905
- Assignees
- 264
- Inventors
- 2,981
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 22 | 0 |
| 2000 | 37 | 0 |
| 2001 | 53 | 20 |
| 2002 | 67 | 76 |
| 2003 | 66 | 76 |
| 2004 | 87 | 93 |
| 2005 | 61 | 98 |
| 2006 | 68 | 111 |
| 2007 | 51 | 79 |
| 2008 | 45 | 90 |
| 2009 | 55 | 85 |
| 2010 | 74 | 69 |
| 2011 | 79 | 72 |
| 2012 | 70 | 65 |
| 2013 | 71 | 57 |
| 2014 | 59 | 47 |
| 2015 | 62 | 79 |
| 2016 | 74 | 79 |
| 2017 | 82 | 71 |
| 2018 | 83 | 79 |
| 2019 | 69 | 77 |
| 2020 | 68 | 83 |
| 2021 | 50 | 53 |
| 2022 | 50 | 81 |
| 2023 | 53 | 75 |
| 2024 | 57 | 76 |
| 2025 | 66 | 74 |
| 2026 | 30 | 40 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device including a metal oxide interface layer and methods for forming the same15 Sep 2026US 12,740,383 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same18 Aug 2026US 12,713,883 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices including staircase structures, and related memory devices21 Jul 2026US 12,690,194 B2Lodestar Licensing Group LLC
- Semiconductor device and manufacturing method thereof14 Jul 2026US 12,685,109 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314356 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same8 Oct 2026US 2026/0314359 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Treatment of electrodes of mim capacitors24 Sep 2026US 2026/0293168 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing the same17 Sep 2026US 2026/0282890 A1Samsung Electronics Co., Ltd.
- In-trench quality improvement of silicon-and-oxygen-containing materials10 Sep 2026US 2026/0271692 A1APPLIED Materials.Inc.
Most cited
By later US patents
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Forming capping layer over metal wire structure using selective atomic layer deposition590US 7,084,060 B1International Business Machines Corporation · 2006
- CVD flowable gap fill587US 7,582,555 B1Novellus Systems, Inc. · 2009
- Selective formation of metallic films on metallic surfaces573US 8,956,971 B2ASM International N.V. · 2015
- Structures and methods for integration of ultralow-k dielectrics with improved reliability554US 7,088,003 B2International Business Machines Corporation · 2006