Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first interlayer insulating film containing therein a plurality of pores;
• a first lower line structure and a second lower line structure in the first interlayer insulating film and spaced apart from each other, each of the first lower line structure and a second lower line structure including a barrier conductive film and a filling conductive film on the barrier conductive film;
• an inserted insulating film in contact with the first interlayer insulating film and including a silicon oxide-based material, the inserted insulating film contacting an upper surface of the barrier conductive film of the first lower line structure and an upper surface of the barrier conductive film of the second lower line structure;
• a barrier insulating film on the inserted insulating film and including a silicon nitride-based material;
• a second interlayer insulating film on the barrier insulating film;
• and
• a second line structure in the second interlayer insulating film and connected to the first line structure,
• wherein the first interlayer insulating film includes a first point and a second point,
• wherein the first point is positioned in the center of the first lower line structure and the second lower line structure,
• wherein the second point is closer to the first lower line structure than to the second lower line structure, and
• wherein a carbon concentration of the first interlayer insulating film at the first point is greater than a carbon concentration of the first interlayer insulating film at the second point.

A semiconductor device comprising:

• a first interlayer insulating film;
• a first line structure in the first interlayer insulating film;
• a second interlayer insulating film on the first interlayer insulating film and the first line structure, the second interlayer insulating film including a plurality of pores therein;
• a second line structure in the second interlayer insulating film, the second line structure including a barrier conductive film and a filling conductive film on the barrier conductive film;
• an inserted insulating film extending along an upper surface of the second interlayer insulating film and contacting an upper surface of the barrier conductive film;
• a barrier insulating film in contact with the inserted insulating film and extending along an upper surface of the inserted insulating film and an upper surface of the second line structure;
• a third interlayer insulating film on the barrier insulating film;
• and
• a third line structure in the third interlayer insulating film,
• wherein each of the first interlayer insulating film and the third interlayer insulating film is free of a pore.