Selective formation of metallic films on metallic surfaces
AssigneeASM International N.V.
InventorsSuvi P. Haukka, Antti Niskanen, Marko Tuominen
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Abstract
Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
Claims28
A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising one or more deposition cycles, each cycle comprising:
- contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metal surface relative to the second dielectric surface;
- and
- converting the first material on the first metal surface to a second metallic material by exposing the first material to a second precursor comprising metal, wherein the method has a selectivity for depositing material on the first metal surface relative to the second dielectric surface of above about 50%.
A method for selectively depositing a film on a substrate comprising a first copper surface and a second dielectric surface, the method comprising one or more deposition cycles:
- contacting the substrate with a first precursor comprising silicon to selectively form a layer of first material comprising Si or B over the first copper surface relative to the second dielectric surface;
- and
- converting the first material to a second metallic material by subsequently exposing the first material to a second precursor comprising a metal fluoride;
- wherein a temperature of the substrate is selected such that the first material forms on the first copper surface with a selectivity of greater than about 90% versus the second dielectric surface.
Dependencies are inferred from the claim text.