Treatment of electrodes of mim capacitors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Hung Tsai, Chun-Hsiu Chiang, Cheng-Hao Hou, Da-Yuan Lee, Chi On Chui
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Hung Tsai, Chun-Hsiu Chiang, Cheng-Hao Hou, Da-Yuan Lee, Chi On Chui
Estimating the term…
A method includes forming a first electrode, and depositing a dielectric layer over the first electrode. The dielectric layer has a first dielectric constant and a first thickness. A dielectric capping layer is deposited over the dielectric layer. The dielectric capping layer has a second dielectric constant higher than the first dielectric constant, and a second thickness smaller than the first thickness. The method further includes forming a second electrode over the dielectric capping layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.
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