H10W 20/097
By thermally treating
Official title: {by thermally treating}
H10W20/097 (By thermally treating) appears on 942 US grants and 932 published applications in this corpus.
Search patents in H10W- Granted patents
- 942
- Published applications
- 932
- Assignees
- 201
- Inventors
- 1,917
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 8 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 11 | 0 |
| 1999 | 20 | 0 |
| 2000 | 24 | 0 |
| 2001 | 48 | 25 |
| 2002 | 49 | 66 |
| 2003 | 59 | 63 |
| 2004 | 70 | 79 |
| 2005 | 43 | 75 |
| 2006 | 53 | 52 |
| 2007 | 39 | 35 |
| 2008 | 24 | 47 |
| 2009 | 35 | 49 |
| 2010 | 35 | 27 |
| 2011 | 31 | 21 |
| 2012 | 28 | 25 |
| 2013 | 26 | 27 |
| 2014 | 35 | 25 |
| 2015 | 25 | 19 |
| 2016 | 26 | 25 |
| 2017 | 25 | 29 |
| 2018 | 27 | 28 |
| 2019 | 27 | 34 |
| 2020 | 26 | 31 |
| 2021 | 23 | 35 |
| 2022 | 30 | 29 |
| 2023 | 23 | 21 |
| 2024 | 21 | 21 |
| 2025 | 19 | 31 |
| 2026 | 6 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming expandable doped oxide films for advanced semiconductor applications18 Aug 2026US 12,713,887 B2Lam Research Corporation
- Interconnect structure having heat dissipation capability and method for manufacturing the same9 Jun 2026US 12,653,019 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices17 Feb 2026US 12,557,639 B2Samsung Electronics Co., Ltd.
- Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device10 Feb 2026US 12,550,709 B2Adeia Semiconductor Solutions LLC
- Method of dielectric material fill and treatment3 Feb 2026US 12,543,547 B2APPLIED Materials.Inc.
- Interconnect structure having heat dissipation capability and method for manufacturing the same24 Sep 2026US 2026/0293643 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In-trench quality improvement of silicon-and-oxygen-containing materials10 Sep 2026US 2026/0271692 A1APPLIED Materials.Inc.
- Compound and Composition Comprising the Same13 Aug 2026US 2026/0234343 A1Merck Patent GmbH
- Doped conductive features of an interconnect structure and methods of manufacturing the same18 Jun 2026US 2026/0173837 A1
- Semiconductor devices4 Jun 2026US 2026/0157168 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Forming capping layer over metal wire structure using selective atomic layer deposition590US 7,084,060 B1International Business Machines Corporation · 2006
- Method for densification of CVD carbon-doped silicon oxide films through UV irradiation581US 6,566,278 B1APPLIED Materials.Inc. · 2003
- Method for fabricating semiconductor device537US 7,842,518 B2Kabushiki Kaisha Toshiba · 2010
- PECVD flowable dielectric gap fill524US 8,557,712 B1Novellus Systems, Inc. · 2013