Interconnect structure having heat dissipation capability and method for manufacturing the same

A semiconductor structure, comprising:

• a base structure which includes a substrate;
• a dielectric part which is disposed on the substrate and which includes
• a first dielectric region proximate to the substrate, and
• a second dielectric region distal from the substrate, one of the first dielectric region and the second dielectric region having a thermal conductivity that is greater than 10 W/mK;
• and
• a conductive layer which is disposed in the dielectric part, and which includes
• a via portion disposed in the first dielectric region, and
• a line portion coupled to the via portion and disposed in the second dielectric region.

A semiconductor structure, comprising:

• a base structure which includes a substrate;
• an etching stop layer which is disposed on the base structure;
• a dielectric part which is disposed on the etching stop layer and which includes a first dielectric region and a second dielectric region that is stacked on the first dielectric region, the second dielectric region having a dielectric constant which is lower than a dielectric constant of the first dielectric region, the second dielectric region having a breakdown field which is greater than a breakdown field of the first dielectric region;
• and
• a conductive layer which is disposed in the dielectric part and which extends through the etching stop layer.