Interconnect structure having heat dissipation capability and method for manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• depositing a front dielectric layer over a front surface of a semiconductor substrate;
• forming a front conductive feature in the front dielectric layer;
• flipping the semiconductor substrate so as to permit a back surface of the semiconductor substrate to face upward, the back surface of the semiconductor substrate being opposite to the front surface of the semiconductor substrate;
• depositing a back dielectric layer on the back surface of the semiconductor substrate, the back dielectric layer having a thermal conductivity that is greater than a thermal conductivity of the front dielectric layer;
• patterning the back dielectric layer to form a recess in the back dielectric layer;
• depositing a conductive layer in the recess;
• and
• planarizing the conductive layer to form a back conductive feature in the back dielectric layer.

A method for manufacturing a semiconductor structure, comprising:

• depositing an etch stop layer on a substrate;
• depositing a stack of a first dielectric layer and a second dielectric layer on the etch stop layer, the etching stop layer having an etching rate that is less than an etching rate of the first dielectric layer and the second dielectric layer, one of the first dielectric layer and the second dielectric layer having a thermal conductivity that is greater than 10 W/mK;
• patterning the stack of the first dielectric layer and the second dielectric layer to form a recess;
• depositing a conductive layer a liner layer in the recess, wherein the conductive layer is separated from the stack of the first dielectric layer and the second dielectric layer by the liner layer, the liner layer having a breakdown field that is greater than a breakdown field of the first dielectric layer;
• and
• planarizing the conductive layer to form a conductive feature in the stack of the first dielectric layer and the second dielectric layer.