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US 12,550,709 B2Granted
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
AssigneeAdeia Semiconductor Solutions LLC
InventorsBenjamin David Briggs, Lawrence A. Clevenger, Bartlet H. Deprospo, Huai Huang, Christopher J. Penny, Michael Rizzolo
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Abstract
A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a first planarized surface comprising a conductive material and a pore-filled dielectric;
- recessing the conductive material with respect to the first planarized surface;
- subsequent to recessing the conductive material, depositing an interlayer dielectric;
- polishing the interlayer dielectric to form a second planarized surface comprising the pore-filled dielectric and the interlayer dielectric;
- and
- removing pore-filling material from the pore-filled dielectric.
3 more elements
Dependencies are inferred from the claim text.