Apparatus and method for repairing defect of semiconductor

An apparatus, comprising:

• a chamber housing having an opening and a plurality of heating devices,
• a gate component disposed at the opening, the gate component including:
• a main body;
• a first flange disposed between a sidewall of the main body and an inner surface of the chamber housing;
• a first chamber defined by an upper surface of the main body, an upper surface of the first flange and the inner surface of the chamber housing, the first chamber configured to accommodate at least a semiconductor element,
• a first sealing element disposed at the upper surface of the first flange;
• a second flange disposed below the first flange between the sidewall of the main body and the inner surface of the chamber housing;
• a second chamber defined by the sidewall of the main body, a lower surface of the first flange, an upper surface of the second flange and the inner surface of the chamber housing, the second chamber not overlapping with the heating devices in a plan view;
• and
• a second sealing element disposed at the upper surface of the second flange,
• a first gas-intake pipe configured to introduce reaction gas to the first chamber, and
• a first exhaust pipe configured to release first gas including the reaction gas and second gas not including the reaction gas from the first chamber.