H10W 20/075
Of multilayered thin functional dielectric layers
Official title: {of multilayered thin functional dielectric layers}
H10W20/075 (Of multilayered thin functional dielectric layers) appears on 2,555 US grants and 2,958 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,555
- Published applications
- 2,958
- Assignees
- 303
- Inventors
- 4,088
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 5 | 0 |
| 1996 | 5 | 0 |
| 1997 | 5 | 0 |
| 1998 | 6 | 0 |
| 1999 | 13 | 0 |
| 2000 | 30 | 0 |
| 2001 | 60 | 39 |
| 2002 | 73 | 90 |
| 2003 | 87 | 85 |
| 2004 | 86 | 97 |
| 2005 | 52 | 97 |
| 2006 | 73 | 94 |
| 2007 | 72 | 77 |
| 2008 | 52 | 103 |
| 2009 | 54 | 89 |
| 2010 | 68 | 65 |
| 2011 | 67 | 55 |
| 2012 | 56 | 69 |
| 2013 | 74 | 50 |
| 2014 | 69 | 72 |
| 2015 | 63 | 91 |
| 2016 | 108 | 101 |
| 2017 | 110 | 109 |
| 2018 | 112 | 119 |
| 2019 | 108 | 144 |
| 2020 | 174 | 229 |
| 2021 | 159 | 175 |
| 2022 | 144 | 221 |
| 2023 | 140 | 209 |
| 2024 | 159 | 208 |
| 2025 | 170 | 178 |
| 2026 | 86 | 92 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Hybrid method for forming semiconductor interconnect structure8 Oct 2026US 2026/0314370 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure having low-resistance via contact8 Oct 2026US 2026/0314396 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Method for forming layer constituted by repeated stacked layers524US 9,018,093 B2ASM IP Holding B. V. · 2015
- Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device511US 7,550,396 B2Advanced Micro Devices, Inc. · 2009
- Combined gate cap or digit line and spacer deposition using HDP493US 6,756,293 B2Micron Technology, Inc. · 2004
- Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride471US 7,829,460 B2Globalfoundries Inc. · 2010