Back to results
US 7,829,460 B2Granted
Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
AssigneeGlobalfoundries Inc.
InventorsChristof Streck, Volker Kahlert
Life of this patent
Estimating the term…
Abstract
By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.
Claims12
A method, comprising:
- forming a nitrogen-containing layer on an exposed surface of a metal region formed in a dielectric layer;
- and
- exposing said nitrogen-containing layer to an ambient established on the basis of an aluminum-containing gas to form an aluminum and nitrogen-containing first barrier layer on said metal region.
Dependencies are inferred from the claim text.