Method for forming layer constituted by repeated stacked layers
AssigneeASM IP Holding B.V.
InventorsNaoto Tsuji, Fumitaka Shoji
Life of this patent
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Abstract
A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.
Claims17
A method for forming a layer constituted by repeated stacked layers, comprising:
- (i) forming at least one first layer on a substrate under first conditions wherein the at least one first layer has a first film stress and a first wet etch rate;
- (ii) forming at least one second layer on the at least one first layer under second conditions wherein the at least one second layer has a second film stress and a second wet etch rate, wherein the first film stress and the second film stress are tensile or compressive and opposite to each other, and one of the first or second wet etch rate is at least 50 times higher than the other of the first or second wet etch rate;
- and
- (iii) conducting at least steps (i) and (ii) multiple times to form a layer constituted by repeated stacked layers, each stacked layer having the same thickness and an identical, repeating layer structure comprising the at least one first layer and the at least one second layer;
- wherein the first conditions and the second conditions for forming at least one of the stacked layers are different from the first conditions and the second conditions for forming other stacked layers;
- wherein one of the at least one first layer or the at least one second layer, whichever has a higher wet etch rate, is at least one sacrificing layer, wherein steps (i) to (iii) are conducted continuously, without breaking a vacuum.
A method for forming a layer constituted by repeated stacked layers includes:
- (a) forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein film stresses of the first and second layers are tensile or compressive and opposite to each other, and wet etch rates of the first and second layers are at least 50 times different from each other;
- and
- (b) repeating step (a) to form a layer constituted by repeated stacked layers, each stacked layer having the same thickness and an identical, repeating layer structure comprising the first and second layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer;
- wherein the first conditions and the second conditions for forming at least one of the stacked layers are different from the first conditions and the second conditions for forming other stacked layers;
- wherein one of the at least one first layer or the at least one second layer, whichever has a higher wet etch rate, is at least one sacrificing layer, wherein steps (i) to (iii) are conducted continuously, without breaking a vacuum.
Dependencies are inferred from the claim text.