Contact plug structure of semiconductor device and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Yu Chou, Jr-Hung Li, Tze-Liang Lee
Life of this patent
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Abstract
A semiconductor device a method of forming the same are provided. A semiconductor device includes a gate stack over a substrate. A first dielectric layer is over the gate stack. The first dielectric layer includes a first material. A second dielectric layer is over the first dielectric layer. The second dielectric layer includes a second material different from the first material. A first conductive feature is adjacent the gate stack. A second conductive feature is over and in physical contact with a topmost surface of the first conductive feature. A bottommost surface of the second conductive feature is in physical contact with a topmost surface of the second dielectric layer.
Claims20
A device comprising:
- a gate stack over a substrate;
- a first dielectric layer over the gate stack, the first dielectric layer comprising a first material;
- a second dielectric layer over the first dielectric layer, the second dielectric layer comprising a second material different from the first material;
- a first conductive feature adjacent the gate stack;
- and
- a second conductive feature over and in physical contact with a topmost surface of the first conductive feature, a bottommost surface of the second conductive feature being in physical contact with a topmost surface of the second dielectric layer in a cross-sectional view, wherein the topmost surface of the second dielectric layer is lower than the topmost surface of the first conductive feature.
A device comprising:
- a gate stack over a substrate;
- an epitaxial source/drain region in the substrate adjacent the gate stack;
- a first dielectric layer over the gate stack, the first dielectric layer comprising a first material, the first material not comprising oxygen;
- a second dielectric layer over the first dielectric layer, the second dielectric layer comprising a second material, the second material being an oxygen-containing material;
- a third dielectric layer over the second dielectric layer, the third dielectric layer comprising a third material, the third material not comprising oxygen;
- a first conductive feature over and in electrical contact with the epitaxial source/drain region, wherein a topmost surface of the first conductive feature is level with a topmost surface of the third dielectric layer in a cross-sectional view;
- and
- a second conductive feature over the first conductive feature, the second conductive feature extending through the third dielectric layer, the second conductive feature being in physical contact with a topmost surface of the second dielectric layer and the topmost surface of the first conductive feature in the cross-sectional view.
A device comprising:
- a gate stack over a substrate;
- a first dielectric layer over the gate stack, the first dielectric layer comprising a first material;
- a second dielectric layer over the first dielectric layer, the second dielectric layer comprising a second material different from the first material;
- gate spacers along sidewalls of the gate stack, the first dielectric layer, and the second dielectric layer;
- a third dielectric layer over the second dielectric layer;
- a first conductive feature adjacent the gate spacers;
- and
- a second conductive feature contacting an upper surface of the first conductive feature, a bottom surface of the second conductive feature contacting an upper surface of the second dielectric layer, wherein the second conductive feature contacts a sidewall of the first conductive feature.
Dependencies are inferred from the claim text.