H10W 20/074
Of dielectric parts comprising thin functional dielectric layers
Official title: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
H10W20/074 (Of dielectric parts comprising thin functional dielectric layers) appears on 10,839 US grants and 11,959 published applications in this corpus.
Search patents in H10W- Granted patents
- 10,839
- Published applications
- 11,959
- Assignees
- 762
- Inventors
- 12,387
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 13 | 0 |
| 1993 | 17 | 0 |
| 1994 | 23 | 0 |
| 1995 | 30 | 0 |
| 1996 | 22 | 0 |
| 1997 | 44 | 0 |
| 1998 | 67 | 0 |
| 1999 | 87 | 0 |
| 2000 | 209 | 0 |
| 2001 | 283 | 121 |
| 2002 | 321 | 335 |
| 2003 | 291 | 315 |
| 2004 | 338 | 388 |
| 2005 | 246 | 383 |
| 2006 | 284 | 434 |
| 2007 | 267 | 378 |
| 2008 | 218 | 387 |
| 2009 | 229 | 325 |
| 2010 | 302 | 260 |
| 2011 | 279 | 245 |
| 2012 | 238 | 294 |
| 2013 | 277 | 247 |
| 2014 | 300 | 338 |
| 2015 | 339 | 469 |
| 2016 | 504 | 516 |
| 2017 | 553 | 550 |
| 2018 | 534 | 539 |
| 2019 | 560 | 616 |
| 2020 | 680 | 830 |
| 2021 | 623 | 744 |
| 2022 | 579 | 775 |
| 2023 | 523 | 789 |
| 2024 | 601 | 719 |
| 2025 | 604 | 628 |
| 2026 | 321 | 334 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor memory device manufacturing method6 Oct 2026US 12,757,699 B2Nanya Technology Corporation
- Semiconductor substrate comprising a through-substrate-via and method for producing thereof6 Oct 2026US 12,757,705 B2ams-OSRAM AG
- Semiconductor device with polymer liner and method for fabricating the same6 Oct 2026US 12,757,707 B2Nanya Technology Corporation
- Semiconductor device having a through contact connected to a buried pattern and penetrating a field insulation film and an etch stop layer6 Oct 2026US 12,757,719 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method of manufacturing the same6 Oct 2026US 12,757,723 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including cap layer of two-dimensional material and method for manufacturing the same8 Oct 2026US 2026/0314350 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low resistance interconnect features and method for manufacturing the same8 Oct 2026US 2026/0314352 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314356 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices775US 7,157,787 B2Intel Corporation · 2007
- Discrete polymer in fan-out packages731US 9,666,502 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017