H10W 20/051
By ion implantation
Official title: {by ion implantation}
H10W20/051 (By ion implantation) appears on 162 US grants and 145 published applications in this corpus.
Search patents in H10W- Granted patents
- 162
- Published applications
- 145
- Assignees
- 61
- Inventors
- 367
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 11 | 0 |
| 2001 | 9 | 2 |
| 2002 | 9 | 8 |
| 2003 | 6 | 4 |
| 2004 | 10 | 8 |
| 2005 | 4 | 3 |
| 2006 | 3 | 5 |
| 2007 | 5 | 6 |
| 2008 | 5 | 5 |
| 2009 | 2 | 7 |
| 2010 | 7 | 7 |
| 2011 | 4 | 0 |
| 2012 | 4 | 3 |
| 2013 | 1 | 1 |
| 2014 | 4 | 4 |
| 2015 | 0 | 2 |
| 2016 | 1 | 3 |
| 2017 | 6 | 5 |
| 2018 | 1 | 2 |
| 2019 | 4 | 5 |
| 2020 | 5 | 6 |
| 2021 | 5 | 9 |
| 2022 | 10 | 17 |
| 2023 | 10 | 11 |
| 2024 | 4 | 7 |
| 2025 | 5 | 8 |
| 2026 | 9 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Common rail contact8 Sep 2026US 12,733,241 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming a contact plug with improved contact metal sealing4 Aug 2026US 12,701,977 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Synaptic mechanotransistors28 Jul 2026US 12,694,277 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Implantation through an etch stop layer23 Jun 2026US 12,666,935 B2Intel Corporation
- Doping barrier layer to facilitate metal fill with large grain size16 Jun 2026US 12,660,581 B2Winbond Electronics Corp.
- Semiconductor structure27 Aug 2026US 2026/0255937 A1Winbond Electronics Corp.
- Semiconductor device interconnect layer formation by selective ion implantation16 Jul 2026US 2026/0206558 A1Axcelis Technologies, Inc.
- Integrated circuit device and method of manufacturing9 Jul 2026US 2026/0198282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same18 Jun 2026US 2026/0173853 A1Winbond Electronics Corp.
- Method of manufacturing a semiconductor device and a semiconductor device26 Mar 2026US 2026/0090051 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for forming electromigration-resistant structures by doping114US 6,268,291 B1International Business Machines Corporation · 2001
- Complex film overlying a substrate with defined work function94US 5,619,057 ASony Corporation · 1997
- Method of forming wiring structure for semiconductor device84US 6,001,729 AKawasaki Steel Corporation · 1999
- Methods of fabricating copper interconnects for integrated circuits77US 5,899,740 ASamsung Electronics Co., Ltd. · 1999
- Method of filling contact holes and wiring grooves of a semiconductor device72US 6,071,810 AKabushiki Kaisha Toshiba · 2000