Method for forming a contact plug with improved contact metal sealing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Liang Cheng, Lin-Yu Huang, Li-Zhen Yu, Huang-Lin Chao, Pinyen Lin
Life of this patent
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Abstract
A method is provided for forming a metal contact plug. In one step, a substrate, which is an Si substrate or an SiO2 substrate, is etched to form a contact hole. In one step, a dielectric liner layer is formed on a sidewall of the contact hole. In one step, the metal contact plug that is in contact with the dielectric liner layer is formed in the contact hole. In one step, an implantation process is performed on the substrate, so as to implant dopants having an atomic size greater than that of Si into the substrate.
Claims20
A method for forming a metal contact plug, comprising steps of:
- etching a substrate to form a contact hole in the substrate, wherein the substrate is made of a material selected from a group consisting of Si and SiO2;
- forming a dielectric liner layer on a sidewall of the contact hole;
- depositing a metal contact layer to fill the contact hole;
- performing a planarization process to form a metal contact plug that is in contact with the dielectric liner layer in the contact hole, and to reveal the substrate that has a top surface where the metal contact plug is exposed;
- and
- performing, after the planarization process, a first implantation process on the top surface of the substrate, wherein the first implantation process is one of a Ge implantation process, an Sn implantation process and a Pb implantation process.
A method for forming a metal contact plug, comprising steps of:
- forming a circuit component in a substrate that is made of a material selected from a group consisting of Si and SiO2;
- forming a metal wire layer above the circuit component when viewed in a first direction;
- etching the substrate to form a contact hole that is above the circuit component when a second direction opposite to the first direction is considered an upward direction, the circuit component being exposed from a bottom of the contact hole when the second direction is considered the upward direction;
- forming a dielectric liner layer on a sidewall of the contact hole;
- forming the metal contact plug that is in contact with the dielectric liner layer in the contact hole;
- performing, after the metal contact plug is formed, a first implantation process to implant a plurality of first dopants that have an atomic size greater than that of Si into a surface of the substrate where the metal contact plug is exposed, wherein the first dopants include one of Ge, Sn and Pb, which was previously absent from the substrate;
- and
- performing, after the metal contact plug is formed, a second implantation process to implant a plurality of second dopants into the surface of the substrate where the metal contact plug is exposed, wherein the second dopants include one of carbon and fluorine, which was previously absent from the substrate.
A method for forming a metal contact plug, comprising steps of:
- forming a circuit component in a frontside portion of a substrate, wherein the circuit component has a silicon-containing feature;
- forming a contact hole in a backside portion of the substrate, wherein the backside portion of the substrate is made of Si or SiO2;
- forming a dielectric liner layer on a sidewall of the contact hole;
- forming the metal contact plug in the contact hole in such a way that the dielectric liner layer is disposed between the metal contact plug and the substrate;
- and
- implanting fluorine into the backside portion of the substrate after the metal contact plug is formed.
Dependencies are inferred from the claim text.