H10W 20/047
By introducing additional elements therein
Official title: {by introducing additional elements therein}
H10W20/047 (By introducing additional elements therein) appears on 2,618 US grants and 2,577 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,618
- Published applications
- 2,577
- Assignees
- 289
- Inventors
- 3,771
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 8 | 0 |
| 1993 | 6 | 0 |
| 1994 | 14 | 0 |
| 1995 | 13 | 0 |
| 1996 | 26 | 0 |
| 1997 | 25 | 0 |
| 1998 | 36 | 0 |
| 1999 | 57 | 0 |
| 2000 | 98 | 0 |
| 2001 | 145 | 58 |
| 2002 | 111 | 102 |
| 2003 | 98 | 95 |
| 2004 | 94 | 95 |
| 2005 | 83 | 93 |
| 2006 | 51 | 86 |
| 2007 | 51 | 83 |
| 2008 | 53 | 99 |
| 2009 | 54 | 64 |
| 2010 | 74 | 89 |
| 2011 | 70 | 41 |
| 2012 | 59 | 63 |
| 2013 | 61 | 58 |
| 2014 | 66 | 89 |
| 2015 | 90 | 128 |
| 2016 | 103 | 125 |
| 2017 | 144 | 128 |
| 2018 | 122 | 138 |
| 2019 | 136 | 114 |
| 2020 | 106 | 140 |
| 2021 | 106 | 131 |
| 2022 | 101 | 147 |
| 2023 | 94 | 140 |
| 2024 | 107 | 129 |
| 2025 | 97 | 89 |
| 2026 | 53 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Metal-insulator-metal structures and methods of forming the same29 Sep 2026US 12,751,283 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal interconnect structure and method for fabricating the same15 Sep 2026US 12,740,384 B2United Microelectronics Corp.
- Film forming method, film forming device, and method for manufacturing semiconductor device8 Sep 2026US 12,729,423 B2Tokyo Electron Limited
- Common rail contact8 Sep 2026US 12,733,241 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated PVD tungsten liner and seamless CVD tungsten fill8 Sep 2026US 12,733,466 B2APPLIED Materials.Inc.
- Contact for electronic component1 Oct 2026US 2026/0305281 A1STMicroelectronics (Rousset) SAS
- Ruthenium oxide film and ruthenium liner for low-resistance copper interconnects in a device10 Sep 2026US 2026/0271700 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure27 Aug 2026US 2026/0255937 A1Winbond Electronics Corp.
- Pre-treatment for sam removal improvement with less carbon residue13 Aug 2026US 2026/0234810 A1APPLIED Materials.Inc.
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239942 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density614US 6,017,818 ATexas Instruments Incorporated · 2000
- Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors597US 6,590,251 B2Samsung Electronics Co., Ltd. · 2003