Ruthenium oxide film and ruthenium liner for low-resistance copper interconnects in a device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorShu-Cheng CHIN
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Abstract
Selective ruthenium and selective ruthenium oxide may be used in single damascene processes and/or dual damascene processes to form BEOL metallization layers and vias of an electronic device. A selective ruthenium liner may be formed to achieve a low contact resistance and a low sheet resistance for the BEOL metallization layers and vias, to promote adhesion between the various layers and materials in the BEOL metallization layers and vias, and/or to reduce or eliminate defects (such as voids and discontinuities) in the BEOL metallization layers and vias.
Claims20
A method, comprising:
- forming a dual damascene structure in one or more dielectric layers of a device, wherein the dual damascene structure comprises a via and a trench above the via;
- forming a ruthenium liner on sidewalls of the via and on sidewalls of the trench;
- and
- forming a copper layer on the ruthenium liner, wherein the copper layer is in the trench and on a bottom surface of the via.
A method, comprising:
- forming a dual damascene structure in one or more dielectric layers of a device, wherein the dual damascene structure comprises a via;
- forming a ruthenium liner on sidewalls of the via, wherein a thickness of the ruthenium liner on a bottom surface of the via is less than approximately 50% of a thickness of the ruthenium liner on the sidewalls of the via;
- and
- forming a copper layer on the ruthenium liner in the via.
A method, comprising:
- forming a ruthenium liner on sidewalls and a bottom surface of the via of dual damascene structure, and further on sidewalls, of a trench of the dual damascene structure;
- and
- forming a copper layer on the ruthenium liner.
Dependencies are inferred from the claim text.