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US 12,729,423 B2Granted
Film forming method, film forming device, and method for manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsSeokhyoung Hong, Tsuyoshi Takahashi, Taichi Monden
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Abstract
A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.
Claims15
A film forming method comprising:
- providing a substrate into a processing container;
- forming a metal-based film on the substrate within the processing container;
- and
- subsequently, forming a surface layer containing Si on a surface of the metal-based film by supplying a Si-containing gas into the processing container in which the substrate is provided such that the Si-containing gas is adsorbed on the surface of the metal-based film, so as to suppress oxidation of the metal-based film when the substrate is carried out of the processing container,
- wherein the surface layer includes a TiSiN film and is in a range of 0.5 to 1 nm in thickness.
2 more elements
Dependencies are inferred from the claim text.